| PART |
Description |
Maker |
| SKRGACD010 SKRGAFD010 SKRGAND010 SKRGARD010 SKRGAQ |
6.2mm Diameter Round Terminal (Radial Type)
|
ALPS ELECTRIC CO.,LTD.
|
| MB90097-PFV |
TV 27C 19#20 4#16 4#12 SKT PLU
ON-Screen Display Controller
|
Fujitsu Limited
Fujitsu Component Limited.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NE34018 NE34018-T1 NE34018-T2 |
SR BTS VERT LFT 4 ASY PLU
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| IRFHS8342TR2PBF |
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package
|
International Rectifier
|
| 5120642-1 |
2mm Hard Metric PCB Mount Connectors ( Z-PACK 2mm HM ); 2MM HM HDR ASY,12 ROW 072 R H ( AMP )
|
Tyco Electronics
|
| 5100159-1 |
2mm Hard Metric PCB Mount Connectors ( Z-PACK 2mm HM ); 2MM HDR, 55 POS EXTN MOD ( AMP )
|
Tyco Electronics
|
| IRLHS6276 |
20V Dual N-Channel Logic Level HEXFET Power MOSFET in a PQFN 2mm x 2mm Lead Free package
|
International Rectifier
|
| STK4160MK5 STK4190K5 STK4190MK5 STK4120MK5 STK4110 |
30W x 2-channel power amplifier
2ch./1packge - Power Supply 6W/ch. ~ 100W/ch. THD=0.08%
2ch./1packge, - Power Supply 6W/ch. ~ 100W/ch. THD=0.08%
PIEZO-BUZZER 4.096KHZ 15MM-DIA 9.5NF-30% W/CASING BULK
STK Audio Power Amplifier 沙头角音频功率放大器
TRANSDUCER AUDIO ; Capacitance:14nF; Connector type:2 pin; Diameter, external:28mm; Diameter, panel cut-out:19.05mm; Diameter, pin:0.95mm; Distance, sound level:30cm; Frequency:3500Hz; Frequency, capacitance measurement:1kHz;
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| MAX8808ZETA |
1A Linear Li Battery Chargers with Integrated Pass FET and Thermal Regulation in 2mm x 2mm TDFN 1-CHANNEL POWER SUPPLY SUPPORT CKT, DSO8
|
Maxim Integrated Products, Inc.
|
| 5100141-1 |
2mm Hard Metric PCB Mount Connectors ( Z-PACK 2mm HM ); 2MM H.M. TYPE "B" PIN ASSY. ( AMP )
|
Tyco Electronics
|
| 5100141-9 |
2mm Hard Metric PCB Mount Connectors ( Z-PACK 2mm HM ); 2MM H.M. TYPE "B" PIN ASSY. ( Tyco Electronics )
|
Tyco Electronics
|
|
