| PART |
Description |
Maker |
| K7A403200B K7A403200B-QC K7A403201B K7A403201B-QC |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM718V887 |
256Kx18 Synchronous SRAM
|
Samsung Electronic
Samsung semiconductor
|
| KM718FV4021 |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung semiconductor
|
| K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM
256 Megabit, 3.0 Volt-only Page Mode Flash Memory
128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N401801M K7N403601M |
128Kx36 & 256Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| CD40192BC CD40192BCN CD40193BCM CD40193BCN CD40192 |
Synchronous 4-Bit Up/Down Decade Counter . Synchronous 4-Bit Up/Down Binary Counter
Synchronous Up/Down Counter 同步减计数器
Automotive Catalog Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 125 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDIP16
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| TC7MH163FK TC7MH161FK |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic 东芝的CMOS数字集成电路硅单
Synchronous Presettable 4-Bit Binary Counter Asynchronous Clear
Synchronous Presettable 4-Bit Binary Counter Synchronous Clear
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| HSD16M64B8A HMD16M64B8A-10 HMD16M64B8A-10L HMD16M6 |
The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module.
Synchronous DRAM Module 128Mbyte (16Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V
|
List of Unclassifed Manufacturers
ETC
Hanbit Electronics Co.,Ltd
|
| KM718V847 |
(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
|
Samsung Semiconductor
|
| KM718V849 KM736V749 |
(KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung Semiconductor
|
