| PART |
Description |
Maker |
| HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb 64M X 8 DDR DRAM, 0.7 ns, PDSO66 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| DU5162ETR-FAC DU5162ETR-E3C H5DU5182ETR-E3C |
32M X 16 DDR DRAM, 0.65 ns, PDSO66 32M X 16 DDR DRAM, 0.75 ns, PDSO66 64M X 8 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| MT46V32M16P-5B MT46V32M16P-5BLIT MT46V32M16P-5BIT |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 128M X 4 DDR DRAM, 0.75 ns, PDSO66
|
Micron Technology, Inc. BI Technologies, Corp.
|
| HY5DV641622AT-5 |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
| K4H1G0438A-UC/LA2 K4H1G0838A-UC/LA2 K4H1G0438AUC/L |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 1Gb A-die SDRAM Specification
|
Cypress Semiconductor, Corp. Samsung semiconductor
|
| HY5DU281622ETP HY5DU28822ETP HY5DU28422ETP HY5DU28 |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 128Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
| V59C1512164QDLJ25H V59C1512404QDLJ25AI |
32M X 16 DDR DRAM, PBGA84 128M X 4 DDR DRAM, PBGA60
|
PROMOS TECHNOLOGIES INC
|
| NT5DS16M16BS-6KL |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
| V58C2256164SCE5B |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| IS43R16160A-75T |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INTEGRATED SILICON SOLUTION INC
|
|