| PART |
Description |
Maker |
| K4H561638H-UI_PCC K4H561638H-UI_PB3 K4H561638H-UI_ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4H561638H-UI/PB0 K4H561638H-UI/PB3 K4H561638H-UI/ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S5616 |
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
SAMSUNG[Samsung semiconductor]
|
| K4H560838H |
(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H560838E-ZLB3 K4H560438E-ZC K4H560438E-ZC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| HYS72V32300GU-8-C2 HYS64V32300GU HYS64V32300GU-75- |
3.3 V 32M x 64/72-Bit, 256MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC 内存| 32MX64 |的CMOS |内存| 168线|塑料
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM Modules - 256MB PC133 (3-3-3) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (3-3-3) 1-bank (ECC); End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 1-bank; End-of-Life
SDRAM Modules - 256MB PC133 (2-2-2) 1-bank (ECC); End-of-Life
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
