| PART |
Description |
Maker |
| 2SB1371 |
Silicon PNP triple diffusion planar type(For high power amplification) 6 A, 120 V, PNP, Si, POWER TRANSISTOR
|
TE Connectivity, Ltd.
PANASONIC[Panasonic Semiconductor]
|
| CSD288 CSA614 CSA614Y |
25.000W Low Frequency PNP Plastic Leaded Transistor. 55V Vceo, 3.000A Ic, 120 - 240 hFE.
PNP/NPN PLASTIC POWER TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| SFT3403 |
5 AMP PNP HIGH SPEED POWER TRANSISTOR 120 VOLTS
|
Solid States Devices, Inc
|
| MJ15016 |
Complementary Silicon High-Power Transistor(15A,120V（集电极-发射极）,180W，补偿型，硅PNP大功率晶体管) 15 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| MJ15015 MJ15016 MJ2955A ON0037 2N3055 2N3055A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 / 120 VOLTS 115 / 180 WATTS
From old datasheet system
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 120 VOLTS 115 180 WATTS
Complementary Slllcon
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| 2N4030 2N4031 2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE.
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE.
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE.
|
Continental Device India Limited
|
| 2SA811A 2SA811A-C16 2SA811A-T1B-A |
50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Old Company Name in Catalogs and Other Documents
|
Renesas Electronics Corporation
|
| CSB546O CSB546R CSB546Y |
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 70 - 140 hFE. Complementary CSD401O
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 80 hFE. Complementary CSD401R
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 120 - 240 hFE. Complementary CSD401Y
25.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 40 - 240 hFE. Complementary CSD401
|
Continental Device India Limited
|
