| PART |
Description |
Maker |
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| MAFRIN0370 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
MACOM[Tyco Electronics]
|
| PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
| MRF1000MB MRF1000MB-15 |
Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| CA901 CA901A |
17 dB 40-860 MHz VHF/UHF CATV/MATV AMPLIFIERS
|
MOTOROLA[Motorola, Inc]
Motorola Inc
|
| CA901A |
CA901A 17 dB, 40-860 MHz, VHF/UHF CATV/MATV Amplifier - Archived
|
Motorola
|
| MW4IC915 |
MW4IC915MBR1, MW4IC915GMBR1 GSM/GSM EDGE, N-CDMA, W-CDMA, 860-960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
|
Motorola
|
| SD1496-3 RF621 |
RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| QPP-010 |
QuikPAC module data. 60W, 925-960 MHz, Class AB power stage.
|
XEMOD
|
