| PART |
Description |
Maker |
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| 908E624 MM908E624ACDWB/R MM908E624 |
Integrated Triple High-Side Switch with Embedded MCU and LIN Serial Communication for Relay Drivers
TRIPLE HIGH-SIDE SWITCH WITH EMBEDDED MCU AND LIN
|
Motorola Inc
Motorola, Inc.
|
| ATA663203-14 ATA663231-14 |
LIN Bus Device Family including Voltage Regulator and LIN SBC with Compatible Footprint
|
ATMEL Corporation
|
| LBS15010 |
150MHz High-Loss SAW Filter 10.1MHz Bandwidth
|
SIPAT Co,Ltd
|
| HA2-2548-5 HA2-2548-9 HA7-2548-5 HA3-2548-5 HA9P25 |
150MHz, High Slew Rate, Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| TIM7179-16UL |
HIGH POWER P1dB=42.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM7179-12UL |
HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| MM908E622 MM908E622ACDR2 |
Integrated Quad Half-Bridge, Triple High-Side and EC Glass Driver with Embedded MCU and LIN for High End Mirror
|
飞思卡尔半导体(中国)有限公司
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
