| PART |
Description |
Maker |
| MAX5069 MAX5069DAUE MAX5069A MAX5069AAUE MAX5069B |
High-Frequency / Current-Mode PWM Controller with Accurate Oscillator and Dual FET Drivers
High-Frequency, Current-Mode PWM Controller with Accurate Oscillator and Dual FET Drivers
GT 10C 10#16 PIN PLUG
|
http://
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| 2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
|
TOSHIBA[Toshiba Semiconductor]
|
| IXTK128N15 |
Discrete MOSFETs: Standard N-channel Types
High Current Mega MOS FET
|
IXYS Corporation
|
| PS7341CL-1A PS7341CL-1A-A PS7341CL-1A-E3 PS7341CL- |
CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET
|
California Eastern Laboratories
CEL[California Eastern Labs]
|
| PS9402-V PS9402-E3 PS9402-V-E3 |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
|
Renesas Electronics Corporation
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 4590R-223K 4590R-563K 4590R-823K 4590-682K 4590-68 |
INDUCTOR HIGH CURRENT 22.0UH 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 56.0UH 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 82.0UH 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 6.8UH 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High Current Filter Inductors
INDUCTOR HIGH CURRENT 5.6UH 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 1500UH 1 ELEMENT, 1500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 470.0UH 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 180.0UH 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 18000UH 1 ELEMENT, 18000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 680.0UH 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR AXIAL LEADED
INDUCTOR HIGH CURRENT 27000UH
1 ELEMENT, 15000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
|
API Delevan
|
| MMFT2N25E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
