| PART |
Description |
Maker |
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM
x16 Fast Synchronous SRAM
x18 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
| IS61SF25616 IS61SF25616-10B IS61SF25616-10TQI IS61 |
x16 Fast Synchronous SRAM x16快速同步SRAM
x18 Fast Synchronous SRAM
256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
HIROSE ELECTRIC Co., Ltd.
ISSI[Integrated Silicon Solution, Inc]
|
| 74AC11163N 74ACT11163N 74AC11163D |
5 V, synchronous presettable synchronous 4-bit bunary counter, asynchronous reset
|
Philips
|
| HEF40162 HEF40162B HEF40162BD HEF40162BF HEF40162B |
Hex D-type flip-flop
4-bit synchronous decade counter with synchronous reset
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS61LV6464 |
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
|
ICSI
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| EDI2DL32256V EDI2DL32256V35BC EDI2DL32256V40BC EDI |
TMS320C6202. TMS320C6203. TMS320C6204. TMS320C6 Families
x32 Fast Synchronous SRAM
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,4.0ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.5ns,256Kx32同步流水线脉冲静态RAM)
256Kx32 Synchronous Pipline Burst SRAM 3.3V(3.3V,3.8ns,256Kx32同步流水线脉冲静态RAM)
|
WEDC[White Electronic Designs Corporation]
|
| GS84032T-166 GS84032T-166I GS84032B-166I GS84032B- |
x32 Fast Synchronous SRAM
x36 Fast Synchronous SRAM
256K x 18 128K x 32 128K x 36 4Mb Sync Burst
x18 Fast Synchronous SRAM x18快速同步SRAM
|
Coilcraft, Inc.
|
