| PART |
Description |
Maker |
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
| SGW25N120 |
IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
|
INFINEON[Infineon Technologies AG]
|
| F8A06FF |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220VAR 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）|20VAR
|
Glenair, Inc.
|
| IXGH24N60BU1S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| IXGP15N120B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）| TO - 220AB现有
|
Maxim Integrated Products
|
| HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB
21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
| FF100R06KF |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 100A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 600V的五（巴西）国际消费电子展| 100号A一（c）|米：HL080HD5.3
|
Infineon Technologies AG
|
| IXGH24N60C |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|采用TO - 247AD
|
IXYS, Corp.
|
| IXSH35N100 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 35A条一（c）|采用TO - 247AD
|
PerkinElmer, Inc.
|
