| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH27060F |
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| T1G4005528-FS T1G4005528-FS-EVB1 T1G6001528-Q3 T1G |
55W, 28V, DC ?3.5GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CGH27030F-AMP CGH27030F-TB |
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
| D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管（功100W - 28V 900MHz时）（镀金多用的DMOS射频硅场效应管（功率100W - 28V 900MHz的）
TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd.
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| PDM-81M-3.8GSQ |
3300 MHz - 4300 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.7 dB INSERTION LOSS
|
MERRIMAC INDUSTRIES INC
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| SM3338-43 |
3300-3800 MHz 20 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| HMC822LP6CE |
FRACTIONAL-N SYNTHESIZER w/ INTEGRATED VCO 665 - 825, 1330 - 1650, 2660 - 3300 MHz
|
Hittite Microwave Corporation
|
| CGHV27200 |
200 W, 2500-2700 MHz, GaN HEMT for LTE
|
Cree, Inc
|
| QPD1004 QPD1004EVB1 QPD1004S2 QPD1004SQ QPD1004SR |
25W, 50V, 30 ?1200 MHz, GaN RF Input-Matched Transistor
|
TriQuint Semiconductor
|
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
|
