| PART |
Description |
Maker |
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| PEB22554-HT |
POT 10K OHM 9MM HORZ PLA BUSHING
|
SIEMENS AG
|
| Z50FF3 Z50FF5 |
High Voltage Diodes - Axial Lead 180mA - 1000mA ?30ns - 50ns ?Hermetic
|
Voltage Multipliers Inc...
|
| 3PFT15 3PFT05 3PFT1 3PFT2 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit 超快的轴向整流器50 V00五，木卫一\u003d 4.0
RECTIFIER, up to 200V, 4A, 30ns
|
Semtech, Corp.
Semtech Corporation
|
| GUR5H60 GURF5H60 GURB5H60 |
Ultrafast Rectifiers, Forward Current 5.0A, Reverse Voltage 600V, Reverse Recovery Time 30ns
|
VISAY[Vishay Siliconix]
|
| 15-80-0129 0015800129 A-70567-0276 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| 15-80-0109 0015800109 70567-0275 A-70567-0275 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38μm (15μ) Gold, (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.38渭m (15渭) Gold, (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| A-70280-0280 010-87-9805 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, Dual Row, Vertical, High Temperature, 80 Circuits, 0.76渭m (30渭") Gold (Au) Selective Plating, Tin(Sn) PC Tail Pla
2.54mm (.100) Pitch C-Grid? Breakaway Header, Dual Row, Vertical, High Temperature, 80 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating, Tin(Sn) PC Tail Plating, 2.72mm (.107) PC Tail
|
Molex Electronics Ltd.
|
| MXD1013 MXD1013PA MXD1013PD MXD1013SA MXD1013SE MX |
3-in-1 silicon delay line. Output delay 45ns.
3-in-1 silicon delay line. Output delay 30ns.
3-in-1 silicon delay line. Output delay 90ns.
3-in-1 silicon delay line. Output delay 12ns.
3-in-1 silicon delay line. Output delay 25ns.
Silver Mica Capacitor; Capacitance:11pF; Capacitance Tolerance: 1pF; Series:CD4; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:2.5mm; Leaded Process Compatible:No RoHS Compliant: No
3-in-1 silicon delay line. Output delay 70ns.
3-in-1 silicon delay line. Output delay 75ns.
3-in-1 silicon delay line. Output delay 50ns.
3-in-1 silicon delay line. Output delay 20ns.
3-in-1 silicon delay line. Output delay 80ns.
3-in-1 silicon delay line. Output delay 15ns.
|
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
MAXIM - Dallas Semiconductor
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
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