| PART |
Description |
Maker |
| VNC2 |
Debug Module
|
FTDI
|
| V2DIP1-64 |
Designed to allow rapid development of designs using the VNC2-64Q IC
|
Future Technology Devices International Ltd.
|
| AN2104 |
Using Background Debug Mode for the M68HC12 Family
|
Freescale Semiconductor, Inc
|
| ATMEGA48 ATMEGA168 ATMEGA88 |
4K byte self-programming Flash Program Memory, 512 byte SRAM, 256 Byte EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega48V).
16K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega168V).
8K Byte self-programming Flash Program Memory, 1K Byte SRAM, 512 Bytes EEPROM, 8 Channel 10-bit A/D-converter(TQFP/MLF). debugWIRE On-chip Debug System. Up to 24 MIPS throughput at 24 MHz. 1.8 - 5.5 Volt Operation (ATmega88V).
|
Atmel
|
| STEVAL-IDS001V5M |
Debug connector
|
STMicroelectronics
|
| ATTINY2313 ATTINY2313-24SJ |
8-BIT, FLASH, 24 MHz, RISC MICROCONTROLLER, PDSO20 0.300 INCH, LEAD FREE, PLASTIC, MS-013AC, SOIC-20
2K Bytes of In-System Self-Programmable Flash, 128 Bytes In-System Programmable EEPROM, 128 Bytes Internal SRAM. USI--Universal Serial Interface, Full Duplex UART. debugWIRE for on-chip-debug. Up to 16 MIPS throughput at 16 MHz.
|
Atmel, Corp.
|
| HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时5705555ns
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块（存取时57055555ns
128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时57205555ns 128Kx32 SRAM的模块（低功耗的CMOS28Kx32静态内存模块（存取时间15,17,20,25,35,45,55纳秒））
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
|
White Electronic Designs Corporation
TE Connectivity, Ltd.
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020 |
8M x 36 Bit FPM DRAM Module with Parity
8M x 36 Bit DRAM Module with Parity
8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
