| PART |
Description |
Maker |
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| BAS52 BAS52-02V |
Silicon Schottky Diode
Schottky Diodes - Low current rectification and high speed switching Schottky diode
|
Infineon Technologies A...
Infineon Technologies AG
|
| IRF7807VD2PBF |
Co-Pack N-channel HEXFET? Power MOSFET and Schottky Diode
FETKY MOSFET / SCHOTTKY DIODE
|
International Rectifier
|
| NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD
Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
| STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| B5A100VI |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| BAT68-02L BAT68-07 BAT68-08S BAT68-09S BAT68-06W B |
Silicon Schottky Diodes 硅肖特基二极
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range
Schottky Diodes - Silicon RF Schottky diode array
|
INFINEON[Infineon Technologies AG]
|
| B5A45VIC |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER)
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER) 肖特基型二极管堆栈（开关式电源，转换器
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
