| PART |
Description |
Maker |
| MC68450 |
Direct Memory Access Controller
|
Motorola, Inc
|
| TMPZ84C10AM-6 TMPZ84C10AP-6 TMPZ84C10AT-6 |
CMOS-Z80 DMA : DIRECT MEMORY ACCESS CONTROLLER
|
TOSHIBA[Toshiba Semiconductor]
|
| Z84C1008PEC Z84C1008PEG |
Z80 DMA Direct Memory Access Controller
1 CHANNEL(S), 8 MHz, DMA CONTROLLER, PDIP40 PLASTIC, DIP-40
|
Zilog, Inc.
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
| SI3012 SI3021 SI3015-KS SI3044 SI3046 SI3048 SI302 |
3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT
|
ETC
N.A.
|
| SI3016 |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT
|
ETC[ETC]
|
| SI3016-KS SI3016 SI3016-BS SI3016-F-FS |
3.3 V ENHANCED GLOBAL DIRECT ACCESS ARRANGEMENT
|
SILABS[Silicon Laboratories]
|
| SI3056 SI3010 |
(SI3010/18/19/56) GLOBAL SERIAL INTERFACE DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories
|
| MB85R256PFTN MB85R256PF MB85R256 |
Memory FRAM(Ferroelectric Random Access Memory)
|
Fuji Electric
Fujitsu Component Limited.
|
| TMM2063AP-10 TMM2063AP-12 TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
120ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
100ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY
|
Toshiba Semiconductor
|
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
