| PART |
Description |
Maker |
| FQD4P25TM FQD4P25TMWS |
P-Channel QFETMOSFET -250V, -3.1A, 2.1
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
| FQB8N90CTM |
N-Channel QFETMOSFET
|
Fairchild Semiconductor
|
| FQA13N50CF109 |
N-Channel QFETMOSFET
|
Fairchild Semiconductor
|
| FQA6N90CF109 |
N-Channel QFETMOSFET 900V, 6A, 2.3
|
Fairchild Semiconductor
|
| FQN1N50CTA FQN1N50C |
N-Channel QFETMOSFET 500V, 0.38A, 6
N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ohm
|
Fairchild Semiconductor
|
| STS1C1S250 |
N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRFS624B IRF624B IRF624 IRF624BFP001 IRFS624BFP001 |
250V N-Channel B-FET / Substitute of IRFS624 & IRFS624A
250V N-Channel B-FET / Substitute of IRF624 & IRF624A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQAF16N25C |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
| IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A)
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.435ohm，身份证\u003d 8.0A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 8A条（丁）|63AB
|
International Rectifier, Corp.
|
| FQB6P25 FQI6P25 FQB6P25TM |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
