| PART |
Description |
Maker |
| APL602J |
Power MOSFET; Package: ISOTOP®; ID (A): 43; RDS(on) (Ohms): 0.125; BVDSS (V): 600; 43 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
LINEAR MOSFET 600V 43A 0.125?/a>
LINEAR MOSFET 600V 43A 0.125з
|
Microsemi, Corp.
Advanced Power Technology
|
| FCA47N60 FCH47N60 |
600V N-Channel MOSFET 47 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
600V N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFBC40 |
CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
|
Intersil, Corp.
Intersil Corporation
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| SSS4N60 SSS4N60B SSP4N60B |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FCI25N60NF102 FCI25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 125m
N-Channel SupreMOS? MOSFET 600 V, 25 A, 125 mΩ
|
Fairchild Semiconductor
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| IXTA4N60P IXTU4N60P IXTY4N60P |
MOSFET N-CH 600V 4A D2-PAK 4 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
IXYS, Corp.
IXYS Corporation
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STP4NC60A STP4NC60AFP STB4NC60A-1 |
N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMeshII MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A TO-220/TO-220FP/I2PAK POWERMESH II MOSFET
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET
32BIT MCU,GPT,SIM,QSM N沟道600V 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh第二MOSFET的⑩
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
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