| PART |
Description |
Maker |
| AOD11S60 AOI11S60 |
600V 11A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| IRFPC50LC |
Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
|
IRF[International Rectifier]
|
| STP11NM60FP |
N-CHANNEL 600V 0.4 OHM 11A TO-220/D2PAK/I2PAK/TO-220FP MDMESH POWER MOSFET
|
SGS Thomson Microelectronics
|
| STB11NM60 STB11NM60-1 |
N-CHANNEL 600V - 0.4 OHM - 11A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
ST Microelectronics
|
| APT6027HVR |
POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6045BVR |
POWER MOS V 600V 15A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT60M75JVR APT60M75 |
POWER MOS V 600V 62A 0.075 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6011B2VFR |
POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6017JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 31A 0.170 Ohm
|
Advanced Power Technology
|
| APT6010JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
