| PART |
Description |
Maker |
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| JTDB25 |
25 Watts, 36 Volts, Pulsed Avionics, 960-1215 MHz
|
Microsemi Corporation
|
| TAN75A |
75 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
GHZTECH[GHz Technology]
|
| TPR500 |
500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
|
GHZTECH[GHz Technology]
|
| DME150 |
150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz
|
GHZTECH[GHz Technology]
|
| MDS140L |
140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz
|
Microsemi Corporation
|
| TPR400 |
400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
high power COMMON BASE bipolar transistor.
|
List of Unclassifed Manufacturers
ETC[ETC]
GHZTECH[GHz Technology]
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| 1214-110M |
110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
|
