| PART |
Description |
Maker |
| A23L1616 A23L16161 A23L16161V A23L16162 A23L16162V |
70ns 2M x 16/4M x 8bit CMOS MASK ROM
100ns 2M x 16/4M x 8bit CMOS MASK ROM
Power Resistor; Series:MK; Resistance:20ohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
2M X 16 / 4M X 8 BIT CMOS MASK ROM 200万16 / 4米8位CMOS掩膜ROM
|
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
|
| TMP90C801 |
High Speed Advanced CMOS 8-bit Microcontroller,Integrating 8-Bit CPU,RAM，ROM，General Serial Interface,Timer/Event Counter(高速、先进的 CMOS 8位微控制器（芯片集成位CPU,ROM，RAM，通用串行接口，定时器/事件计数器）)
|
Toshiba Corporation
|
| LC895199K |
CD-ROM, CD-R/RW, DVD±R/RW Applications: 32 × ATAPI supporting version of LC895196
CMOS IC
32 CD-ROM Decoder with ATAPI (IDE) Interface
|
Sanyo Semicon Device
|
| LC89515K LC89515 |
CD-ROM/CD-I Error Correction/ Host Interface LSI CD-ROM/CD-I纠错/主机接口LSI
CMOS LSI
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| CXG1212UR |
High Power 3P3T Switch with Logic Contro
|
SONY
|
| EM23C1000 |
High Performance 128K ? 8 CMOS ROM(楂???奖M浣??128K ? 8锛?MOS ROM)
|
ELAN Microelctronics Corp .
|
| HD404918 HD404919 HD40P4919 HN27C256-20 HN27C256H- |
ROM(words): 16,386; V(cc): -0.3 to 7.0V; CMOS 4-bit single-chip microcomputer
CMOS 4-bit single-chip microcomputer of the HMCS400 series incorporates ROM,RAM,1
|
HITACHI[Hitachi Semiconductor]
|
| NCL30051DR2G |
PFC and Half-Bridge Resonant Combo Contro for LED Lighting
|
ON Semiconductor
|
| Z86L43 Z86L33 |
CMOS Z8 CONSUMER CONTROLLER PROCESSOR
|
ZILOG[Zilog, Inc.]
|
| LC895198 |
CD-ROM Decoder for 32 ×ATAPI (IDE) Drives(CD-ROM译码器用2倍速ATAPI (IDE)驱动) CD - ROM解码2 ×的ATAPI（IDE）的驱动器（CD - ROM光碟译码器用2倍速的ATAPI（IDE）的驱动
CMOS IC
CD-ROM Decoder for 32 x ATAPI (IDE) Drives
CD-ROM Decoder for 32x ATAPI (IDE) Drives
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
