| PART |
Description |
Maker |
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State
GE Solid State
|
| T491D226K025AT T491D476K016AT EMVY630GTR331MMH0S 2 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
| MTD1N40 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MTM40N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| MRF21125 MRF21125R3 MRF21125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| VN30ABA VN35ABA |
Field Effect Power Transistor
|
General Electric Solid State
|
| MRF1517NT108 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| MTM15N05L MTM15N06L MTP15N05EL MTP15N06L MTP15N05L |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
| MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
