| PART |
Description |
Maker |
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5G09TU-14 |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 1SS413 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RB706F-40 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS404WS |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD. SEMTECH ELECTRONICS LTD...
|
| CUS15S30 |
Schottky Barrier Diode Silicon Epitaxial
|
Toshiba Semiconductor
|
| 1SS369 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SB706D-40 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RKD705WKKRP RKD705WKKRH |
Silicon Epitaxial Schottky Barrier Diode for Detector
|
Renesas Electronics Corporation
|
| HN20S01FU |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|