| PART |
Description |
Maker |
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| CXTA64 CXTA14 |
SMD Small Signal Transistor NPN Darlington
SURFACE MOUNT SILICON COMPLEMENTARY DARLINGTON TRANSISTORS
SMD Small Signal Transistor PNP Darlington
|
Central Semiconductor Corp.
|
| CZTA14 CZTA64 |
SMD Small Signal Transistor NPN Darlington
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| 2N6301 JANTX2N6300 JANTX2N6301 JANTXV2N6301 2N6300 |
NPN Darlington Transistor
PNP DARLINGTON POWER SILICON TRANSISTOR
|
MICROSEMI[Microsemi Corporation]
|
| 2SB601 2SB601-Z 2SB601-S 2SB601L 2SB601M 2SB601K |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| BC517 BC516 |
Darlington Transistors
COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTOR
|
Motorola Inc
MICRO-ELECTRONICS[Micro Electronics]
|
| FCX605 FCX605TA |
120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
NPN Darlington Transistor
|
http://
Zetex Semiconductors
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| JANTXV2N7370 2N7370 JAN2N7370 JANTX2N7370 |
NPN Darlington Transistor
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
|
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
