| PART |
Description |
Maker |
| 2SJ555 2SJ555-E |
60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| APT20M36BLL APT20M36SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 65A 0.036 Ohm
|
Advanced Power Technology
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| FDD3682 FDD3682NL |
N-Channel PowerTrench MOSFET, 100V, 32A, 0.036 ohm 5.5 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m
N-Channel PowerTrench MOSFET 100V, 32A, 36mз
N-Channel PowerTrench MOSFET 100V, 32A, 36m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRFL9014 IRFL9014PBF |
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN, FET General Purpose Power
TRANSISTOR 1.8 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-4, FET General Purpose Power
|
Vishay Siliconix
|
| AUIRF7640S2TR AUIRF7640S2TR1 |
DirectFET Power MOSFET
5.8 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
DirectFETPower MOSFET
|
International Rectifier
|
| MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
| MTW26N15E ON2689 |
TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM 26 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
|
