| PART |
Description |
Maker |
| MRF6S21060N |
2110鈥?170 MHz, 14 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CGY96 |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
INFINEON TECHNOLOGIES AG
|
| SKY77555 |
Tx-Rx FEM Based on CMOS PA for Dual-Band GSM / GPRS (880-915 MHz and 1710-1785 MHz)
|
Skyworks Solutions Inc.
|
| MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MRF9030MR1 MRF9030MBR1 |
945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
The RF Sub-Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MHW913 |
14 WATT 880-915 MHz RF POWER AMPLIFIER
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| PE3X20TF-FREQ-OUT7 |
CRYSTAL OSCILLATOR, CLOCK, 170 MHz - 650 MHz, PECL OUTPUT
|
PLETRONICS INC
|
| SM1145JDS-FREQ-OUT21 SM1145JDV-FREQ-50-OUT21 |
CRYSTAL OSCILLATOR, CLOCK, 70 MHz - 170 MHz, CMOS OUTPUT
|
PLETRONICS INC
|
