| PART |
Description |
Maker |
| MIE-546A2U 546A2U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (UL Listed)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED)
GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-516A2U 516A2U |
Infrared Emitting Diodes (UL Listed)
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| F5F1 |
GAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| CQX15 CQX17 |
GAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| LED55B LED55C LED56 |
GAAS INFRARED EMITTING DIODE
|
QT[QT Optoelectronics]
|
| SE307 SE307-C |
Gaas infrared emitting diode
|
NEC Corp.
NEC[NEC]
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| LNA2903L |
GaAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LN69 |
GaAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
