| PART |
Description |
Maker |
| S8865-64 S8865-128 S8865 |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| NFA31GD1004704D NFA31GD4704704D NFA31GD1001014D NF |
EMIFIL (RC Combined) Array
|
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co...
|
| G8909-01 G8909 |
InGaAs PIN photodiode array
|
http://
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics
|
| OPR2100 |
Six Element SMD Photodiode Array
|
OPTEK[OPTEK Technologies]
|
| C900406 C9004 |
Driver circuit for 16-element photodiode array
|
Hamamatsu Corporation
|
| MD1001 |
GENERAL-PURPOSE PHOTODIODE ARRAY,QFP
|
Centronic
|
| MXP22-C |
Multi Element Opto Arrays
Monolithic Photodiode Array-Chip
|
MICROSEMI[Microsemi Corporation]
|
| SFH250F SFH250 SFH202 SFH202A |
PIN PHOTODIODE FIBER OPTIC PHOTODIODE DETECTOR, 400-1100nm, THROUGH HOLE MOUNT
50 V, PIN photodiode
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MXP18-C |
Multi Element Opto Arrays
Monolithic Photodiode Array-Chip
CERM RESONATOR 6.00MHZ .5% SMD
|
MICROSEMI[Microsemi Corporation]
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| C10439-01 C10439-02 C10439-03 |
Photodiode module Integrates a Si photodiode for precision photometry with low-noise amp
|
Hamamatsu Corporation
|
