| PART |
Description |
Maker |
| LND090A |
Revolutionary LF-MCTs Replace MOSFETs, Bipolars & IGBTs In Switching Apps with only 1.9nC Gate Charge
|
Linear Dimensions Semiconductor
|
| LR5810-BL |
he LR5810 series switcher ICs cost effectively replace all power supplies up to 5W
|
Leshan Radio Company
|
| MTD20N06HDLT4 MTD20N06HDL-D |
Power MOSFET 20 Amps, 60 Volts, Logic Level N-Channel DPAK
Replace With NTD24N06L, Package: Dpak, Pins=3
|
ON Semiconductor
ONSEMI
|
| GVT72512A8 |
REVOLUTIONARY PINOUT 512K X 8
|
Galvantech
|
| PTF |
Industrial, Very Low Noise and Voltage Coefficient, Small Package, 100% Laser Spiraled, Very Good High Frequency Characteristics, Acceptance Testing Available, Can Replace Wirewound Bobbins, Superior Moisture Protection
|
Vishay
|
| IDW10G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| K6R1004C1A K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A- |
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS63C1024 |
128K x 8 High Speed CMOS Static RAM 5V Revolutionary Pinout
|
Integrated Silicon Solution
|
| SPP02N80C3 SPP02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP04N80C3 SPP04N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
