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CY7C1911CV18 - (CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

CY7C1911CV18_5847857.PDF Datasheet


Part No.	CY7C1911CV18
Description	(CY7C1x1xCV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
File Size	468.97K / 31 Page
Maker	Cypress Semiconductor
Homepage	http://www.cypress.com/
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Related Part Number

PART	Description	Maker
K7Q161862 K7Q161862B K7Q163662B	512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36 & 1Mx18 QDRTM b2 SRAM 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7S3218T4C K7S3236T4C K7S3236T4C-FECI45 K7S3236T4C	1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7R320982M K7R321882 K7R321882M K7R323682 K7R32368	1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36 & 2Mx18 QDRTM II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM 1Mx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K7R163684B06 K7R161884B	512Kx36 & 1Mx18 QDRTM II b4 SRAM	Samsung semiconductor
K7Q161852A	512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
K7Q161862B	(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM	Samsung semiconductor
PD46365092BF1-E40-EQ1 PD46365182BF1-E33Y-EQ1 PD463	36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION	Renesas Electronics Corporation
K7R161882B K7R163682B K7R160982B	512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM 512Kx36	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
UPD44325092BF5-E33-FQ1 PD44325092B-15	4M X 9 QDR SRAM, 0.45 ns, PBGA165 36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION	Renesas Electronics Corporation
CY7C1315AV18-250BZC CY7C1311AV18 CY7C1311AV18-167B	18-Mb QDR(TM)-II SRAM 4-Word Burst Architecture 18-Mb QDRTM-II SRAM 4-Word Burst Architecture	CYPRESS[Cypress Semiconductor]

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