| PART |
Description |
Maker |
| M29W512B M29W512B120K1T M29W512B120NZ1T M29W512B55 |
512 Kbit 64Kb x8 / Bulk Low Voltage Single Supply Flash Memory
512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory 512千位64Kb的8，大量低电压单电源闪
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| M27W512 M27W512-100B6TR M27W512-100F6TR M27W512-10 |
4 Mbit 256Kb x16 Low Voltage UV EPROM and OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM 512千位64Kb的x8低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27W512-100B6E M27W512-100F6 M27W512-100K6 M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| UHR-5/4000-D48 UHR-12/1650-D48 UHR-12/1650-D12 UHR |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 型DC - DC电压转换
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 型DC - DC电压转换
|
EEPROM
NIC Components, Corp.
PLX Technology, Inc.
|
| M48Z512A10 M48Z512A-85PM6 M48Z512A-85PM1 M48Z512AY |
4 Mbit (512 Kbit x 8) ZEROPOWER庐 SRAM
4 Mbit (512 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
http://
|
| SST27SF020-70-3C-PH |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST
|
| ULA6102N UL1102N UL1101N UL1101 UL1102 ULA6102 |
2 Kbit serial I²C bus EEPROM for DIMM serial presence detect
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
PARAMETRY DOPUSZCZALNE
Dwa wzmacniacze rnicowe
|
List of Unclassifed Manufacturers
ETC[ETC]
Ultra CEMI
|
| CY14C512PA13 |
512-Kbit (64 K x 8) SPI nvSRAM
|
Cypress Semiconductor
|
| M440T513Y-15ZA9 M440T513Y |
5.0V, 16 Mbit (512 KBit X 32) TIMEKEEPER SRAM
5.0V, 16 Mbit (512 Kbit x 32) TIMEKEEPER-R SRAM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
