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ST6391B1 - MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.6A; On-Resistance, Rds(on):0.18ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No 8位微控制器HCMOS电视频率合成带OSD

ST6391B1_5738125.PDF Datasheet


 Full text search : MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.6A; On-Resistance, Rds(on):0.18ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No 8位微控制器HCMOS电视频率合成带OSD
 Product Description search : MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.6A; On-Resistance, Rds(on):0.18ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No 8位微控制器HCMOS电视频率合成带OSD


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