| PART |
Description |
Maker |
| IRF7406PBF IRF7406TRPBF |
Generation V Technology
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| STY80NM60N |
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh Power MOSFET
N-channel 600 V - 0.035 ヘ - 80 A - Max247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STW21NM50N STF21NM50N STB21NM50N-1 STP21NM50N STP2 |
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.15ヘ - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| BFC41 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC42 |
4TH GENERATION MOSFET
|
SEMELAB
Seme LAB
|
| BFC14 |
4TH GENERATION MOSFET
|
Seme LAB
|
| SUN12A65F |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
| BFC62 |
4TH GENERATION MOSFET
|
Seme LAB
|
| SUN04A60F |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
| SUN02A60F |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
| SUN10A60FD |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
