| PART |
Description |
Maker |
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TC58FVB321 TC58FVXB-70 TC58FVXB-10 TC58FVT321-70 |
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32兆位分 200万6位）的CMOS闪存
CAT5E PATCH CORD 100MHZ 7 FOOT BLACK 32兆位分 200万6位）的CMOS闪存
32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| PD42S65405 PD4264405 |
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M 动态RAM) 16,777,216词由4位的CMOS动态存储器（RAM400动态）
16,777,216 Words by 4 Bits CMOS Dynamic RAMs(64M ?ㄦ?RAM)
|
NEC, Corp.
NEC Corp.
|
| TC58FVT800-12 TC58FVB800F TC58FVT800FT-10 TC58FVT8 |
(TC58Fxxx) 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVT800F-85 TC58FVT800-10 TC58FVT800-85 TC58FVT |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
50 AMP LATCHING POWER RELAY
|
Toshiba Corporation
|
| TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58256AFT |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM
256-MBIT (32M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| EDS6432AFTA-75-E EDS6432CFTA-75-E |
64M bits SDRAM (2M words x 32 bits)
|
Elpida Memory, Inc.
|
| TC58V64BDC |
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
Toshiba Corporation
|
| SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash
From old datasheet system
(SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
