| PART |
Description |
Maker |
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TC58FVM6B2A TC58FVM6T2A TC58FVM6B2ATG-65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC58FVM5B2 TC58FVM5B3 TC58FVM5T2AFT65 TC58FVM5B2AF |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58V64AFT |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA
|
| 2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET
Power F-MOS FETs
|
Matsshita / Panasonic
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| TC554161AFTI-70 TC554161AFTI-10L TC554161AFTI-70L |
262,144-WORD BY 16-BIT STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TPCA8053-H |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)
|
Toshiba Semiconductor
|
| TPCS8101 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8404 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)
|
Toshiba Semiconductor
|
