| PART |
Description |
Maker |
| RF137 |
Transceiver For GSM Applications
|
Conexant
|
| RF133 |
RF/IF Transceiver For GSM Applications
|
Conexant
|
| UAA3587 |
Complete, single-package GSM/GPRS/EDGE RF transceiver
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| UAA3535 UAA3535HL |
Low power GSM/DCS/PCS multi-band transceiver
|
NXP Semiconductors
|
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|
| CX74017 74017 |
On the Direct Conversion Receiver
RF Transceiver for Multi-Band GSM, GPRS, and EDGE Applications
|
Skyworks Solutions Inc.
|
| PD60-0004--05S PD60-0004-05S |
High Power5 Channel Transmit Combiner for AMPS/GSM/IS-95 高功率，5频道传输合路的AMPS/GSM/IS-95
High Power锛?5 Channel Transmit Combiner for AMPS/GSM/IS-95
|
|
| AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
|
Analog Devices, Inc.
|
| 42R07-3123-150 42R07-3223-150 42R07-3123-250 42R07 |
16/20A IEC 60320 APPL. INLET; QC TERMINALS; SNAP-IN, PANEL MOUNT
|
PowerDynamics, Inc
|
