| PART |
Description |
Maker |
| VG36128161BT VG36128401BT VG36128801BT |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG36643241BT-10 VG36643241BT-7 VG3664321412BT VG36 |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| VG36644080/1641DTL-8H |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| VG36256161A VG36256401A VG36256801A |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| VG36648041BT-10 VG36648041BT-7 VG36648041BT-8 VG36 |
CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| 5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| MSM56V16800D MSM56V16800DH |
2-Bank?1,048,576-Word?8-Bit Synchronous Dynamic RAM(2缁??,048,576瀛??浣??姝ュ???AM)
2-Bank×1,048,576-Word×8-Bit Synchronous Dynamic RAM(2组,048,576字位同步动态RAM)
2-Bank x 1048576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| GLT4160L04S-50J3 GLT4160L04S-50TC GLT4160L04SE-60T |
60ns; 4M x 4 CMOS dynamic RAM with extended data output
40ns; 4K x 4 CMOS dynamic RAM with extended data output
50ns; 4M x 4 CMOS dynamic RAM with extended data output
|
List of Unclassifed Manufacturers
G-LINK Technology
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
