| PART |
Description |
Maker |
| DAN217UGH |
Dual series switching diode Lead free product Halogen-free type
|
Zowie Technology Corporation
|
| DAN217G |
Switching Diode Lead free product
|
Zowie Technology Corporation
|
| SP6655ER-L/TR SP6655EU-L/TR |
2 A SWITCHING REGULATOR, DSO10 3 X 3 MM, LEAD FREE, MO-229VEED-5, DFN-10
2 A SWITCHING REGULATOR, PDSO10 LEAD FREE, MSOP-10
|
Exar, Corp.
|
| BAS21HT1G |
HIGH VOLTAGE SWITCHING DIODE Lead free product
|
Zowie Technology Corporation
|
| RJK0380DPA-00-J53 RJK0380DPA10 |
45 A, 30 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK-8
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
| BAT54SWGH |
Schottky Barrier Diode Lead free product Halogen - free type
|
Zowie Technology Corporation
|
| AM29841A/BKA AM29841A/B3A AM29843PC AM29843ALC AM2 |
600V Low-Vceon Copack IGBT in a TO-220 FullPak package; Similar to IRGIB7B60KD with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS10B60KD with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRG4BC15UD-L with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRGSL6B60KD with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; Similar to IRGSL15B60KD with Lead Free Packaging
1200V UltraFast 4-20 kHz CoPack IGBT in a TO-274AA package; Similar to IRG4PSH71UD with Lead Free Packaging
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package; A IRGS6B60KD with Standard Packaging
600V Warp2 150kHz Copack IGBT in a TO-247AC package; A IRGP50B60PD1 with Standard Packaging
600V UltraFast Copack Trench IGBT in a TO-247AD package with Ultra-Low VF Diode for Induction Heating and Soft Switching Apps; A IRGP4068D-EPBF with Standard Packaging
600V HyperFast 1-8 kHz Co-Pack IGBT in a D2-Pak package; A IRG4BC30FD-S with Standard Packaging
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package; A IRG4BC15UD-L with Standard Packaging
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package; A IRGS4B60KD1 with Standard Packaging
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AD package; Similar to IRG4PH40UD2-E with Lead Free Packaging 10位D型锁存器
600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package; Similar to IRG4RC10KD with Lead Free Packaging 9位D型锁存器
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package; A IRGB6B60KD with Standard Packaging 9位D型锁存器
|
Duracell
TT electronics Semelab, Ltd.
NXP Semiconductors N.V.
|
| BUP314D Q67040-A4226-A2 |
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor Group
SIEMENS AG
|
| PST7040M PST7022M PST7026M PST7025M PST7021M PST70 |
Analog IC
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7324D1 with Lead Free Packaging
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7353D1 with Lead Free Packaging
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; A IRF7353D1 with Standard Packaging
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; A IRF7324D1 with Standard Packaging
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; A IRF7324D1 with Tape and Reel Packaging
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7421D1 with Lead Free Packaging
-30V FETKY - MOSFET and Schottky Diode in a Micro 8 package; A IRF7526D1 with Standard Packaging
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package; A IRF7534D1 with lead Free Packaging
|
|
| ESH1B-E3 |
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode
|
Vishay Semiconductors
|
| B125C800DME3 B80C800DME3 |
DIODE 0.9 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
DIODE 0.9 A, 125 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
|
Vishay Semiconductors
|
| RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
