| PART |
Description |
Maker |
| FBA50CA45 FBA50CA50 |
dual power MOSFET module designed for fast swiching
|
List of Unclassifed Manufacturers ETC N.A.
|
| IRF7341ITRPBF |
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
|
International Rectifier
|
| REC-14LH REC-16LH |
Precision Linear Transducers, Designed for Mounting in Hydraulic or Pneumatic Cylinder, Conductive Plastic Element, Unsealed, Designed for High Pressure Chamber of Cylinders, High Accuracy, Very Good Repeatability
|
Vishay
|
| IRF7413UPBF |
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market
|
International Rectifier
|
| TC429EOA TC429EOA713 TC429EPA TC429CPA TC429MJA |
The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the ... The TC429 is a high-speed,single CMOS-level translator and driver.Designed specifically to drive highly capacitive power MOSFET gates,the TC429 features 2.5 Ω output impedance and 6A peak output current drive. A 2500pF capacitive loa
|
Microchip
|
| IR1150 IR1150PBF IR1150ISTRPBF |
One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), designed and qualified for the Consumer market One Cycle Control PFC IC designed to operate in continuous conduction mode (CCM), designed and qualified for the Industrial market.
|
International Rectifier
|
| G2N7000 |
The G2N7000 is designed for high voltage, high speed applications such as switching regulators, converters solenoid and relay drivers. N-CHANNEL ENHANCEMENT MODE MOSFET
|
E-Tech Electronics LTD GTM CORPORATION
|
| H66T19AA H66T19BA H66T32BA H66T68AA H66T68 H66T68B |
64-Note ROM memory Dynamic speaker can be driven with external NPN transistor CMOS LSI DESIGNED FOR USE IN DOOR BELL/ TELEPHONE AND TOY CMOS LSI DESIGNED FOR USE IN DOOR BELL, TELEPHONE AND TOY
|
MICRO-ELECTRONICS[Micro Electronics] HSMC Hi-Sincerity Mocroelectronics Hi-Sincerity Microelectronics
|
| MBS1230-22 MBS1205 MBS1205-22 MBS1210-22 MBS1215-2 |
Equipment Designed to Meet EMI Regulations Such As VCCI /CISPR /FCC /VDE /etc Equipment Designed to Meet EMI Regulations Such As VCCICISPRFCCVDEetc Equipment Designed to Meet EMI Regulations Such As VCCI,CISPR,FCC,VDE,etc
|
LAMBDA[DENSEI-LAMBDA]
|
| STC2G15 STC2G15R |
BCMOS VOLTAGE REGULATOR DESIGNED FOR USE WITH VERY LOW ESR AND TANTALIUM OUTPUT CAPACITOR BCMOS VOLTAGE REGULATOR DESIGNED FOR USE WITH VERY LOW ESR AND TANTALUM OUTPUT CAPACITOR
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
| GSM14P256KB-I66 GSM14P512KB-I66 |
256KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统56KB二级高速缓冲存储器) 512KB Secondary Cache Module Designed For Use With Intel Pen-tium CPU based system(用于英特尔奔腾处理器系统12KB二级高速缓冲存储器)
|
GSI Technology
|