| PART |
Description |
Maker |
| IS42S16128 IS42S16128-10T IS42S16128-12T IS42S1612 |
128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS42S16128-8T IS42S16128-12T |
Chassis Mount and Din Rail Filters RoHS Compliant: Yes
128K Words x 16 Bits x 2 Banks (4-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
DRAM
|
| IS42S16100-5BL IS42S16100-5TL IS42S16100-6BL IS42S |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| IS45S16100C1-7TA1 IS45S16100C1-7TLA1 IS45S16100C1- |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS45S16100C1-7TLA IS45S16100C1-7TLA1 IS45S16100C1- |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
| TC59LM814CFT-60 TC59LM806CFT-50 TC59LM806CFT-55 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
|
TOSHIBA[Toshiba Semiconductor]
|
| IS42VS16100C1-10TI |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50
|
Integrated Silicon Solution, Inc.
|
| LC361000AMLL LC361000ARLL-10 LC361000ARLL-70 LC361 |
1 MEG (131072 words X 8 bits) SRAM 1迈可31072字8位）的SRAM
128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| TC59LM814CFT-60 TC59LM806CFT-60 TC59LM806CFT-50 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM
4,194,304-WORDSx4 BANKSx16-BITS Network FCRAM or 8,388,608-WORDSx4BANKSx8-BITS Network FCRAM
|
Toshiba Corporation
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
