| PART |
Description |
Maker |
| AMS2301 |
Super high density cell design for
|
Advanced Monolithic Systems Ltd
|
| LPM9029C |
Super high density cell design
|
Lowpower Semiconductor ...
|
| AMS3402 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2304 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| QM3007K |
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology
|
TY Semiconductor Co., Ltd
|
| LS26500 |
3.6 V Primary lithium-thionyl chloride High energy density C-size bobbin cell
|
saftbatteries
|
| LS14500EX |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density AA-size bobbin cell
|
SAFT
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STP9527 |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9235 |
STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
