| PART |
Description |
Maker |
| 744308025 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| 744308040 |
POWER-CHOKE WE-HCM
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| 744302010 |
POWER-CHOKE WE-HCM-75
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| 744309047 |
POWER-CHOKE WE-HCM 1390
|
Wurth Elektronik GmbH & Co. KG, Germany.
|
| B82731-H2132-A30 B82731-H2351-A30 B82731-H2112-A30 |
CHOKE 6.8MH 1.3A
CHOKE 100MH 0.35A
CHOKE 10MH 1.1A
CHOKE 3.3MH 1.8A
CHOKE 47MH 0.5A
CHOKE 39MH 0.6A
CHOKE 27MH 0.7A
CHOKE 15MH 0.9A 扼流5MH.9A;
|
PRECI-DIP SA
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
|
BOURNS INC
|
| SUD50N02-06P |
N-Channel MOSFET, 20 V(D-S) , 175°C
N-Channel MOSFET, 20 V(D-S) , 175°C N沟道MOSFET0V（D-S），175
From old datasheet system
N-Channel 20-V (D-S) 175?MOSFET
N-Channel 20-V (D-S) 175掳 MOSFET
N-Channel 20-V (D-S) 175?MOSFET
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SHD125022 SHD125022N SHD125022P SHD125022D |
HERMETIC POWER SCHOTTKY RECTIFIER 175∑C Maximum Operation Temperature 3 A, SILICON, RECTIFIER DIODE, TO-254AA
HERMETIC POWER SCHOTTKY RECTIFIER 175°C Maximum Operation Temperature
|
Sensitron Semiconductor
SENSITRON[Sensitron]
|
| SHD125122 SHD125122P SHD125122D SHD125122N |
HERMETIC POWER SCHOTTKY RECTIFIER 175∑C Maximum Operation Temperature 15 A, SILICON, RECTIFIER DIODE, TO-254AA
HERMETIC POWER SCHOTTKY RECTIFIER 175°C Maximum Operation Temperature
|
Sensitron Semiconductor
SENSITRON[Sensitron]
|
| MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS
From old datasheet system
20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor
Motorola, Inc
|
|
