| PART |
Description |
Maker |
| 1N5223BT50R 1N5231BTR 1N5231BT26A 1N5231BT50A 1N52 |
surface mount silicon Zener diodes 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
16V, 0.5W Zener Diode
33V, 0.5W Zener Diode
12V, 0.5W Zener Diode
13V, 0.5W Zener Diode
10V, 0.5W Zener Diode
25V, 0.5W Zener Diode
22V, 0.5W Zener Diode
30V, 0.5W Zener Diode
15V, 0.5W Zener Diode
27V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
11V, 0.5W Zener Diode
6.0V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
8.7V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.3V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
3.6V, 0.5W Zener Diode
2.4V, 0.5W Zener Diode
3.3V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
5.1V, 0.5W Zener Diode
2.7V, 0.5W Zener Diode
14V, 0.5W Zener Diode
18V, 0.5W Zener Diode
20V, 0.5W Zener Diode
24V, 0.5W Zener Diode
19V, 0.5W Zener Diode
|
Fairchild Semiconductor, Corp.
|
| DF2S24FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.11 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.85 to 16.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.3FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.91 to 13.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 14.85 to 15.52; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| WT-Z224V-AU4 |
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
|
Weitron Technology
|
| DF5A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 19.70; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
