| PART |
Description |
Maker |
| BB644 Q62702-B0907 Q62702-B0905 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Siemens Group
|
| KA2139 |
Tantalum Molded High Capacitance Capacitor; Capacitance: 10uF; Voltage: 16V; Packaging: Tape & Reel 三通道RGB视频放大
3 CHANNEL R.G.B VIDEO AMPLIFIER
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| G7881-21 G7881-22 G7881-23 G7881-32 G7881-44 G8339 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 400V; Case Size: 20x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 6800uF; Voltage: 25V; Case Size: 25x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 400V; Case Size: 20x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 400V; Case Size: 35x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 400V; Case Size: 22x25 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 25x50 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 30x25 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
FIBER OPTIC RECEIVER, 1250Mbps, PANEL MOUNT, LC CONNECTOR
Aluminum Snap-In Capacitor; Capacitance: 68uF; Voltage: 400V; Case Size: 20x25 mm; Packaging: Bulk
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| Z8L18008FEC Z8L18008VEC Z8L18008PEC Z8L18010FSC Z8 |
Microprocessor Unit
Z8018x Family MPU
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:10uF; Capacitance Tolerance: /- 20%; ESR:2.2ohm; Leaded Process Compatible:Yes; Operating Temp. Max:105 C RoHS Compliant: Yes
CONN RING INSUL 26-24 AWG #8
CONN RING INSUL 26-24 AWG #6
CONN RING INSUL 26-24 AWG #2 8-BIT, MICROPROCESSOR, PDIP64
ENHANCED Z180 MICROPROCESSOR
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:6.8uF; Capacitance
dielectric type:Niobium Oxide; Case style:P; Depth, external:1.5mm; Length / Height, RoHS Compliant: Yes
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:15uF; Capacitance
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:4.7uF; Capacitance
|
ZILOG INC
Zilog Inc.
Zilog.
ZiLOG, Inc.
|
| MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
From old datasheet system
|
Leshan Radio Company, Ltd.
ONSEMI[ON Semiconductor]
|
| GS-R4840NV |
; Capacitance:1.2pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:150V; Package/Case:0605; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount 36糯负开关稳压器
36 W NEGATIVE SWITCHING REGULATOR
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TD62501 TD62501F TD62501P TD62504F TD62504P TD6250 |
From old datasheet system
Ceramic Disc Capacitor; Capacitance:3900pF; Capacitance Tolerance: /- 20%; Series:VY2; Voltage Rating:330VDC; Capacitor Dielectric Material:Ceramic
7 SINGLE DRIVER 7单一驱动程序
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| SCP-5759 |
LOW CAPACITANCE HYPERABRUPT VARACTOR DIODE 1.5 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Sensitron Semiconductor
|
| BB304A Q62702-B118 SIEMENSAG-BB304A |
From old datasheet system
Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 42 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Siemens Group
|
