| PART |
Description |
Maker |
| HM62W4100HJP/HLJP |
High-Speed SRAMs
|
Hitachi Semiconductor
|
| HM6216255HCTT/HCLTT HM6216255HCJP/HCLJP HM6216255H |
256K X 16 STANDARD SRAM, 10 ns, PDSO44
High-Speed SRAMs
|
Hitachi Semiconductor
|
| CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit）（4分位，写延迟LVTTL高速同步静态随机存储器28K的36位）
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速（128K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）同步静态存储器
|
Sony, Corp.
|
| IDT71V65603 IDT71V65803S150PFI IDT71V65803S150BQI |
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs ZBT? Feature 3.3V I/O, Burst Counter Pipelined Outputs
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
From old datasheet system
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs
|
IDT[Integrated Device Technology]
|
| 2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，大电流开关，斩波调压器，DC - DC变换器和电机驱动应用
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| GS88218AB-150I GS88218AD-250 GS88218AB-250 GS88218 |
9Mb Burst SRAMs
512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| AT28HC256-12FM/883 AT28HC256-12LM/883 AT28HC256-12 |
CONNECTOR ACCESSORY 32K X 8 EEPROM 5V, 90 ns, CPGA28
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-TSSOP -55 to 125
256 32K x 8 High Speed Parallel EEPROMs
256 32K x 8 High Speed CMOS E2PROM
|
Atmel, Corp.
Atmel Corp.
ATMEL Corporation
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| MAX301 MAX301CJE MAX301CPE MAX301CSE MAX301EJE MAX |
Precision, Dual, High-Speed Analog Switches DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDIP16
Precision, Dual, High-Speed Analog Switches 精密，双路，高速模拟开
Precision / Dual / High-Speed Analog Switches
15kV ESD-Protected / 3.3V Quad RS-422 Transmitters
Precision Dual High-Speed Analog Switches
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
|
| TPC8013-H |
Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
|
