Part Number Hot Search : 
N82S147 40006 T8201375 P4KE91 BSL296SN STYN810S SHIFT CES361J
Product Description
Full Text Search

GT5J301 - INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

GT5J301_5545417.PDF Datasheet


 Full text search : INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
 Product Description search : INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS


 Related Part Number
PART Description Maker
IRG4PC40FPBF IRG4PC40FPBF-15 INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
International Rectifier
IRG4BC29K IRG4BC30K IRG4BC30 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
GT15Q311 INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30K 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRF[International Rectifier]
MGP7N60E-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGS13002DD MGS13002D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
MOTOROLA[Motorola, Inc]
MGW12N120-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MGW20N120-D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
GT50J325 Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
TOSHIBA[Toshiba Semiconductor]
CM600HA-28H High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
MGS05N60D Insulated Gate Bipolar Transistor
MOTOROLA[Motorola, Inc]
MG15J6ES40 INSULATED GATE BIPOLAR TRANSISTOR
Toshiba Semiconductor
 
 Related keyword From Full Text Search System
GT5J301 Supply GT5J301 Lead forming GT5J301 Programmable GT5J301 filetype:pdf GT5J301 Amplifiers
GT5J301 amplifier GT5J301 control GT5J301 FRE DOUNLODE GT5J301 Vcc GT5J301 Positive
 

 

Price & Availability of GT5J301

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.096935033798218