| PART |
Description |
Maker |
| STE38NB50F |
N-CHANNEL 500V - 0.11 OHM - 38A - ISOTOP POWERMESH MOSFET
|
STMicroelectronics
|
| FQU5N30 FQD5N30 FQD5N30TF FQD5N30TM |
300V N-Channel QFET
300V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STD38NF03L |
N - CHANNEL 30V - 0.013 ohm - 38A TO-252 STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| HUF76633P312 |
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET
|
Fairchild Semiconductor
|
| STD38NH02LT4 |
N-CHANNEL 24V - 0.011 OHM - 38A DPAK/IPAK STRIPFET III POWER MOSFET
|
ST Microelectronics
|
| STP7NB30FP STP7NB30 5568 |
N - CHANNEL 300V - 0.75 - 7A - TO-220/TO-220FP PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH MOSFET
|
ST Microelectronics
STMicroelectronics
|
| GFD25N03 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 38A条（丁）|52AA
|
Fairchild Semiconductor, Corp.
|
| EN8586A 2SJ661-12 EN8586 |
P-Channel Power MOSFET, -60V, -38A, 39mOhm, TO-262-3L/TO-263-2L
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| IXTP15N30MB IXTP15N30MA IXTH12N45MA IXTH15N35MB IX |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-247(5)
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | Z-PAC
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5)
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5)
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5)
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 67A条（丁）|的Z -委员
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 24A条（丁）|的Z -委员
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 20A条（丁）|的Z -委员
|
Ricoh Co., Ltd.
|
| FQB9N30 FQI9N30 |
300V N-Channel MOSFET(漏源电压00V的N沟道增强型MOSFET) 9 A, 300 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
