| PART |
Description |
Maker |
| ESJA52-10A |
10kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| SHV-10 |
10kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| HV600S10 |
600mA 10kV HIGH VOLTAGE DIODES
|
getedz electronics
|
| HVP-10 |
10kV 750mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJC60S10 |
600mA 10kV -High Voltage Power Diodes
|
GETAI ELECTRONICS DEVIC...
|
| SHV-12 |
12kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| JB04 |
4.0kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJA08-12 |
12kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJA53-16A |
5mA 16kV HIGH VOLTAGE SILICON RECTIFIER DIODES
|
getedz electronics
|
| DC20KV DC30KV DC40KV DHR4E4C102K2FB |
High Voltage Ceramic Capacitors (over 10kV)
|
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co...
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| HVR-1X-40B SHV-20 SHV-16 UX-F0B SHV-02 SHV-03 SHV- |
9kV,High-Voltage Rectifier Diodes(9kV,高压整流二极 0.35 A, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, 4.5 V, SILICON, SIGNAL DIODE
Ultra low profile, Two-piece, Discrete wire, FPC, and fine coaxial cable connectors; HRS No: 685-0018-5 05; No. of Positions: 14; Operating Temperature Range (degrees C): -35 to 85; General Description: Accessory; Ground plate for FPC type
High-Voltage Rectifier Diodes
|
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
http://
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