| PART |
Description |
Maker |
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| AMS2304 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| LC4256 LC4384V75T176C LC4512 LC4128 LC4064 LC4032 |
IC,COMPLEX-EEPLD,256-CELL,3.8NS PROP DELAY,QFP,100PIN,PLASTIC
IC,COMPLEX-EEPLD,384-CELL,10NS PROP DELAY,QFP,176PIN,PLASTIC
IC,COMPLEX-EEPLD,512-CELL,4.5NS PROP DELAY,QFP,176PIN,PLASTIC
System Programmable Super Fast High Density PLDs
IC,COMPLEX-EEPLD,64-CELL,3.2NS PROP DELAY,QFP,100PIN,PLASTIC
IC,COMPLEX-EEPLD,32-CELL,3.2NS PROP DELAY,TQFP,48PIN,PLASTIC
|
Lattice Semiconductor Corp
|
| QL3060-0PB456C QL3060-1PB456M QL3060-1PB456C QL306 |
60,000 usable PLD gate pASIC 3 FPGA combining high performance and high density.
FPGA|1584-CELL|CMOS|QFP|208PIN|PLASTIC FPGA的| 1584细胞|的CMOS | QFP封装| 208PIN |塑料
FPGA|1584-CELL|CMOS|BGA|456PIN|PLASTIC
|
QuickLogic, Corp.
|
| LS14500 |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
saftbatteries
|
| ISPLSI1016E ISPLSI1016E-100LJI ISPLSI1016E-125LJI |
IN-SYSTEM PROGRAMMABLE HIGH DENSITY PLD
IC,COMPLEX-EEPLD,64-CELL,13NS PROP DELAY,LDCC,44PIN,PLASTIC
|
LATTICE[Lattice Semiconductor]
|
| ST3400SRG |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4526 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4546 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP9437 |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4438 |
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
