| PART |
Description |
Maker |
| PU61C56 |
Power Transistor Array (F-MOS FETs) - Silicon N-Channel Power F-MOS (with built-in zener diode)
|
Panasonic
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
| 2SJ517 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ548 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| 2SK2276 |
Power F-MOS Fets - Silicon N-Channel MOS
|
Panasonic
|
| 2SK833 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET
Fast switching N-channel silicon MOS field effect power transistor.
|
NEC
|
