| PART |
Description |
Maker |
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| MTB4N80E_D ON2428 ON2426 MTB4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| RF1S9630SM IRF9630 FN2224 |
6.5A/ 200V/ 0.800 Ohm/ P-Channel Power MOSFETs
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
From old datasheet system
6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RFD3N08 RFD3N08L RFD3N08LSM FN2836 |
3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 3A0V的，0.800欧姆，逻辑层次，N沟道功率MOSFET
From old datasheet system
3A/ 80V/ 0.800 Ohm/ Logic Level/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| MCR100JZHFL MCR100 MCR100JZHFS0.068OHM MCR100JZHFS |
Low Ohmic Thick Film Chip Resistors
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
|
Rohm
|
| MTB4N80E1 |
4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON SEMICONDUCTOR
|
| APT802R4BN |
5.5 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
|
| BUZ76 |
3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| SML8075BN |
13 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
TT electronics Semelab, Ltd.
|
| IXFD8N80-5T |
800 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET DIE-5
|
IXYS, Corp.
|
|
